Anode engineering for the insulated gate bipolar transistor : A comparative reviewGREEN, David W; VERSHININ, Konstantin V; SWEET, Mark et al.IEEE transactions on power electronics. 2007, Vol 22, Num 5, pp 1857-1866, issn 0885-8993, 10 p.Article

Radiation-enhanced diffusion of palladium for a local lifetime control in power devicesVOBECKY, Jan; HAZDRA, Pavel.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 6, pp 1521-1526, issn 0018-9383, 6 p.Article

High-power P-i-N diode with local lifetime control using palladium diffusion controlled by radiation defectsVOBECKY, Jan; HAZDRA, Pavel.IEEE electron device letters. 2005, Vol 26, Num 12, pp 873-875, issn 0741-3106, 3 p.Article

Characterization of recombination centers in Si epilayers after He implantation by direct measurement of local lifetime distribution with the AC lifetime profiling techniqueSPIRITO, Paolo; DALIENTO, Santolo; SANSEVERINO, Annunziata et al.IEEE electron device letters. 2004, Vol 25, Num 9, pp 602-604, issn 0741-3106, 3 p.Article

Fast soft recovery thyristors with axial lifetime profile fabricated using iridium diffusionCERNIK, M.Microelectronics journal. 2006, Vol 37, Num 3, pp 213-216, issn 0959-8324, 4 p.Conference Paper

Possibilities and limits of axial lifetime control by radiation induced centers in fast recovery diodesSIEMIENIEC, Ralf; LUTZ, Josef.Microelectronics journal. 2004, Vol 35, Num 3, pp 259-267, issn 0959-8324, 9 p.Conference Paper

Lifetime control in silicon power P-i-N diode by ion irradiation : Suppression of undesired leakageHAZDRA, P; KOMARNITSKYY, V.Microelectronics journal. 2006, Vol 37, Num 3, pp 197-203, issn 0959-8324, 7 p.Conference Paper

Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electronsHAZDRA, P; VOBECKY, J; DORSCHNER, H et al.Microelectronics journal. 2004, Vol 35, Num 3, pp 249-257, issn 0959-8324, 9 p.Conference Paper

Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part II: Parameter ExtractionLIQING LU; BRYANT, Angus T; SANTI, Enrico et al.IEEE transactions on power electronics. 2008, Vol 23, Num 1, pp 198-205, issn 0885-8993, 8 p.Article

Compensation and doping effects in heavily helium-radiated silicon for power device applicationsSIEMIENIEC, R; SCHUIZE, H.-J; NIEDERNOSTHEIDE, F.-J et al.Microelectronics journal. 2006, Vol 37, Num 3, pp 204-212, issn 0959-8324, 9 p.Conference Paper

Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part I: Device ModelBRYANT, Angus T; LIQING LU; SANTI, Enrico et al.IEEE transactions on power electronics. 2008, Vol 23, Num 1, pp 189-197, issn 0885-8993, 9 p.Article

Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applicationsVINOD KUMAR KHANNA.Progress in quantum electronics. 2005, Vol 29, Num 2, pp 59-163, issn 0079-6727, 105 p.Article